Reducing the formation of FIB-induced FCC layers on Cu-Zn-Al austenite.

The irradiation effects of thinning a sample of a Cu-Zn-Al shape memory alloy to electron transparency by a Ga(+) focused ion beam were investigated. This thinning method was compared with conventional electropolishing and Ar(+) ion milling. No implanted Ga was detected but surface FCC precipitation was found as a result of the focused ion beam sample preparation. Decreasing the irradiation dose by lowering the energy and current of the Ga(+) ions did not lead to a complete disappearance of the FCC structure. The latter could only be removed after gentle Ar(+) ion milling of the sample. It was further concluded that the precipitation of the FCC is independent of the crystallographic orientation of the surface.